16877太阳集团-China VIP Certification

师资队伍

刘新科

职务：我校微电子研究院院长助理

职称：副教授

办公电话：0755-86931071

EMAIL：xkliu@szu.edu.cn

刘新科(LIU XINKE)博士研究员博士研究生导师 (博士点：电子信息(085403)；所在学院我校电子与信息工程学院)

2004-2008 新加坡国立大学材料系荣誉学士；

2008-2013 新加坡国立大学电气与计算机系微电子专业，博士，导师Prof. Yeo Yee-Chia;

2019 新加坡国立大学电气与计算机系微电子专业高级访问学者，Host Prof. Ang Kah-Wee；

2018 美国加州伯克利分校访问学者（暑假访学），Host Prof. Ali Javey；

联系方式：

xkliu@szu.edu.cn

博士后、研究助理招聘：

招聘博士后、研究助理数名，有兴趣可以直接联系xkliu@szu.edu.cn；研究方向为本人研究领域。

对于优秀的本科生、研究生：

欢迎联系做“挑战杯”项目。对于非常优秀的本科生和研究生，本人推荐去世界名校（前30名）做进一步深造机会（攻读博士学位）。

新加坡国立大学-我校311联合培养项目联络人，截止2023年10月，16877太阳集团累计16名本科生录取，欢迎咨询；

新闻报道：

1. Semiconductor today (2012/06/07) "Gold-free nitride MOS-HEMTs for CMOS compatibility"

Link:http://www.semiconductor-today.com/news_items/2012/JUNE/NUS_070612.html

2. Semiconductor today (2017/2/1) "Gold-free vertical gallium nitride Schottky barrier diodes"

link:http://www.semiconductor-today.com/news_items/2017/feb/sinano_010217.shtml

3.Materialsviewschina (2020/04/21)"Advanced Optical Materials:人工光分子的Fano共振”

Link:https://www.materialsviewschina.com/2020/04/44409/

主持项目（国家、省部、市、校）：

2023-2026 深圳市基础研究重点项目,高性能氮化镓电子器件制造技术关键问题研究, Co-PI;

2023-2028 广东省科技创新战略专项(基石类基础研究重大项目),基于离子束剥离技术的大尺寸金刚石基氮化镓异质集成电子器件研究, Co-PI;

2022-2025 广东省自然科学杰出青年项目,基于氮化镓单晶衬底的电力电子器件,主持人;

2020-2023 广东省广东省重点领域研发计划项目,高质量氮化镓单晶材料的制备及关键技术研究, Co-PI;

2020-2023 广东省广东省重点领域研发计划项目,纵向导通结构GaN功率电子器件关键技术的研究, PI;

2020-2022 深圳市技术攻关项目，垂直氮化镓功率电子分立器件的研发及产业化关键技术研发，PI;

2019-2021中国科学院上海微系统所信息功能材料国家重点实验室开放可以，PI;

2019-2021 广东省广东省重点领域研发计划项目, 基于自主安全SoC 的高端智能彩色激光打印复印机的研制与应用, Co-PI;

2019-2020 深圳市国家配套，项目名称“高频高效率超小型 GaN 基功率开关电源模块 ”，主持人;

2017-2020 国家科技部重大研发计划“战略性先进电子材料”, 项目名称 "GaN基新型电力电子器件关键技术"，课题负责人;

2017-2020 国家科技部重大研发计划“战略性先进电子材料”, 项目名称“”第三代半导体的衬底制备及同质外延” ，任务负责人;

2017-2019 深圳市基础布局项目，项目名称“新型自支撑氮化镓材料在电力电子器件的应用基础研究”，主持人;

2016-2018 国家青年科学基金项目，项目名称“基于p-Cu2O帽层的增强型硅基AlGaN/GaN异质结场效晶体管的制备及可靠性研究”,主持人;

2016-2017 广东省省级科技计划项目, 项目名称"高效节能600V硅基氮化镓HEMTs电力电子器件"，主持人;

2015-2017 教育部留学回国人员科研启动经费；

2015-2017 深圳市孔雀计划启动经费, 项目名称"宽禁带新型半导体器件研究"，主持人;

2015-2017 我校校启动经费；

2015-2016 我校16877太阳集团市重点实验室开放基金;

主持与境外交流项目：

2018-2019 我校与台北科技大学学术合作专题研究项目, 项目"以奈米二维材料制备乙酰胆碱酯酶传感器检测有机磷农药"；

2020 我校与台北科技大学学术合作专题研究项目, 项目"以奈米二维材料制备褪黑激素电化学传感器";

2021我校与台北科技大学学术合作专题研究项目,项目"奈米复合电极材料之开发以应用于泌乳素免疫电化学传感器";

期刊文章：

1. H.-C. Chin, M. Zhu, X. Liu, H.-K. Lee, L. Shi, L.-S. Tan, and Y.-C. Yeo*, “Silane-ammonia surface passivation for gallium arsenide surface-channel n-MOSFETs,”IEEE Electron Device Letters, vol. 30, no. 2, pp. 110-112, 2009.

2. H.-C. Chin, X. Gong, X. Liu, and Y.-C. Yeo*, “Lattice mismatched In0.4Ga0.6As source/drain stressors with in situ doping for strained In0.53Ga0.47As channel n-MOSFETs,” IEEE Electron Device Letters, vol. 30, no. 8, pp. 805-807, 2009.

3. H.-C. Chin, X. Liu, X. Gong, and Y.-C. Yeo*, “Silane and ammonia surface passivation technology for high mobility In0.53Ga0.47As MOSFETs,” IEEE Trans. Electron Devices, vol. 57, no. 5, pp. 973-979, 2010.

4. X. Liu, H.-C. Chin, L. S. Tan, and Y.-C. Yeo*, “High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor deposition,” IEEE Electron Device Letters, vol. 31, no. 1, pp. 8-10, 2010.

5. X. Liu, H.-C. Chin, L. S. Tan, and Y.-C. Yeo*, “In situ surface passivation of gallium nitride for metal-organic chemical vapor deposition of high-permittivity gate dielectric,” IEEE Trans. Electron Devices, vol. 58, no. 1, pp. 95 - 102, 2011.

6. X. Liu, B. Liu, E. K. F. Low, W. Liu, M. Yang, L.-S. Tan, K. L. Teo, and Y.-C. Yeo*, “Local stress induced by diamond-like carbon liner in AlGaN/GaN MOS-HEMTs and impact on electrical characteristics,” Applied Physics Letters, vol. 98, 183502, 2011.

7. X. Liu, E. K. F. Low, J.-S. Pan, W. Liu, K. L. Teo, L. S. Tan, and Y.-C. Yeo*, “Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors,” Applied Physics Letters, vol. 99, 093504, 2011.

8. X. Liu, C. Zhan, K. W. Chan, W. Liu, L. S. Tan, K. J. Chen, and Y.-C. Yeo*, “AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm2 using a CMOS-compatible gold-free process,” Applied Physics Express, vol. 5, 066501, May, 2012. (also reported in Semiconductor TODAY on 7th June, 2012) （Top 20 most downloaded APEX paper in May, 2012）

9. X. Liu, C. Zhan, K. W. Chan, M. H. S. Owen, W. Liu, D. Z. Chi, L. S. Tan, K. J. Chen, and Y.-C. Yeo*, “AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with a High Breakdown Voltage of 1400 V and on-state resistance of 22 mΩ•cm2 using a CMOS Compatible Gold-Free Process,” Japanese Journal of Applied Physics. vol. 52, no. 4, 04CF06, 2013.

10. X. Liu, M. A. Bhuiyan, P. S/O Somasuntharam, C. B. Soh, Z. Liu, D. Z. Chi,W. Liu, W. Yu*, Y. Lu*, L. S. Tan,Y.-C. Yeo, “High Voltage AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors with RegrownIn0.14Ga0.86N Contact Using a Complementary Metal-Oxide-Semiconductor Compatible Gold-Free Process,” Applied Physics Express, vol. 7, 126501, 2014.

11. X. Liu*, Z. Liu, P. S/O Somasuntharam, J. Pan, W. Liu, F. Jia, Y. Lu, C. Liu,W. Yu, J. He, and L. S. Tan, “Band alignment of HfAlO/GaN (0001) determined by x-ray photoelectron spectroscopy: Effect of in situ SiH4 Passivation,” Journal of Alloys and Compounds, vol. 636, pp.191-195, 2015.

12. C. Liu, J. Wen, W. Yu*, B. Zhang, Z. Xue, Y. Chang, L, Zhu, X. Liu*, Y. Zhao, M. Zhang, X. Wang, Q.-T. Zhao, “High Performance Strained Si0.5Ge0.5 Quantum-Well p-MOSFETs Fabricated Using a High-k/Metal-gate last Process,” Superlattices and Microstructures, vol. 83, pp. 2010-215, 2015.

13. X. Liu, J. He, D. Tang, Q. Liu, J. Wen, W. Yu*, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, J. Pan, W. Liu, K.-W. Ang, and Z. He, “Band alignment of atomic layer deposited high-k Al2O3/multilayer MoS2 interface determined byx-ray photoelectron spectroscopy,” Journal of Alloys and Compounds, vol. 650,pp.502-507, 2015.

14. X.Liu, Y.Lu*, W. Yu*, J. Wu, J. He, D. Tang, Z. Liu, P. S/O Somasuntharam,D. Zhu, W. Liu, P. Cao, S. Han, S. Chen*, and L. S. Tan, “AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with PolarizedP(VDF-TrFE) Ferroelectric Polymer Gating,” Scientific Reports, vol. 5, 14092, 2015.

15. S. Chen , F. Mo, S. Chen, Z. Ge, H. Yang, J. Zuo, X. Liu*, and H. Zhuo*, “New insights into multi-shape memory behaviours and liquid crystalline properties of supramolecular polyurethane complexes based on pyridine-containing polyurethane and 4-n-Octyldecyloxybenzoic acid,” Journal of Materials Chemistry A, vol. 3, pp. 19525-19538, 2015.

16. X. Liu, J. He, Q. Liu, D. Tang, F. Jia, J. Wen, Y. Lu*, W. Yu*, D. Zhu,W.Liu, P. Cao, S. Han, J. Pan, Z. He, and K.-W. Ang, “Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: Effect of CHF3 treatment,” Applied Physics Letters, vol. 107, 101601, 2015.

17. X. Liu*, J. He, Q. Liu, D. Tang, J. Wen, W. Liu, W. Yu, J. Wu*, Z. He, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, and K.-W. Ang, “Low temperature carrier transport study of monolayer MoS2 field effect transistors prepared by chemical vapor deposition under an atmospheric pressure,” Journal of Applied Physics, vol. 118, 124506, 2015.

18. X. Liu, K.-W Ang*, W. Yu, J. He, X. Feng, Q. Liu, H. Jiang, D. Tang, J.Wen, Y. Lu, W Liu, P. Cao, S. Han, J. Wu, W. Liu, X. Wang, D. Zhu*, and Z. He*, “Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature,” Scientific Reports, vol. 6, 24920, 2016.

19. Z.-P. Ling, J.-T. Zhu, X. Liu*, and K.-W. Ang*, “Interface engineering for the enhancement of carrier transport in black phosphorus transistor with ultra-thin high-k gate dielectric,” Scientific Reports, vol. 6, 26609, 2016.

20. X. Feng, V. V. Kulish, P. Wu, X. Liu, and K.-W. Ang*, “Anomalously enhanced thermal stability of phosphorene via metal adatoms doping: An experimental and first-principles study,” Nano Research, vol. 9, pp.2687-2695, 2016.

21. X. Liu*, Y. Zhang, Q. Liu, J. He, L. Chen, K. Li, F. Jia, Y. Zeng, Y. Lu,W. Yu, D. Zhu, W. Liu*, J. Wu, Z. He, and K.-W. Ang, “Band alignment of ZnO/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy,” Applied Physics Letters, vol. 109, 071602, 2016.

22. K. Li, K.-W.Ang, Y. Lv, and X. Liu*, “Effects of Al2O3 capping layers on the thermal properties of thin black phosphorus,” Applied Physics Letters, vol.109, 261901, 2016.

23. S. Han*, S. M. Liu, W. J. Liu, P. J. Cao, Y. M. Lu*, Y. X. Zeng, F. Jia, X. Liu, D. L. Zhu, and S. C. Su, “Effect of Substrate Surface Atom Constitution and The Migration Characteristics of Reactive Atoms on Crystal Structure of MgxZn1−xO Thin Films Deposited by PLD Method,” The Journal of Physical Chemistry C, vol. 120, pp. 12568-12577, 2016.

24. X. Liu*, Q. Liu, J. Wang, W. Yu, K. Xu, and J.-P. Ao*, “1.2 kV GaN Schottky BarrierDiodes on Free-Standing GaN Wafer using a CMOS-Compatible Contact Materials,” Japanese Journal of Applied Physics, vol. 56, 026501.2017.

25. P. Xia, X. Feng, R. J. Ng, S. Wang, D. Chi, C. Li, Z. He, X. Liu, and K.-W.Ang*, “Impact and origin of interface states in MOS capacitor with monolayer MoS2 and HfO2 high-k dielectric,”Scientific Reports, vol. 7, 40669, 2017.

26. X. Liu, L.Chen*, Q. Liu, J.He, K. Li, W. Yu, J.-P. Ao, and K.-W. Ang, “Band alignment of Atomic Layer Deposited TiO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy”, Journal of Alloys and Compounds, vol. 698, pp.141-146, 2017.

27. X. Liu*, J. Wu, W. Yu, L. Chen, Z. Huang, H. Jiang, J. He, Q. Liu, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, X. Xiong, W. Xu, J.-P. Ao, K.-W. Ang, and Z. He*, “Monolayer WxMo1-xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors”, Advanced Functional Materials, 1606469, 2017.

28. K.K. Tehare, S.S. Bhande, S. U. Mutkule, F. J. Stadler, J.-P. Ao, R. S. Mane*, and X. Liu*, “Low-temperature chemical synthesis of rutile and anatase mixed Phase TiO2 nanostructures for DSSCs photoanodes,” Journal of Alloys and Compounds, vol, 704, pp. 187-192, 2017.

29. W. C. Tan, Y. Cai, R. Ng, L. Huang, X. Feng, G. Zhang, Y.-W. Zhang, C. A. Nijhuis, X. Liu, and K.-W. Ang*, “Few-layer black phosphorus carbide field-effect transistor via carbon doping,” Advanced Materials, 29, 1700503,2017.

30. W. Chen, S. Luo, Z. Wan, X. Feng, X. Liu, and Z. He*, “Ruthenium acetylacetonate in interface engineering for high performance planar hybrid perovskite solar cells,”Optics Express, vol. 25, no. 8, pp. A253-A263, 2017.

31. S. Han, S.M. Liu, Y.M. Lu*, P.J. Cao, W.J. Liu, Y.X. Zeng, F. Jia, X. Liu, D.L. Zhu, “High performance solar-blind ultraviolet photo detector based on mixed-phase MgZnO thin film with different interfaces deposited by PLD method,” Journal of Alloys and Compounds, vol, 694, pp. 168-174, 2017.

32. X. Feng, H. Su, Y. Wu, H. Wu, J. Xie, X. Liu, J. Fan, J. Dai*, and Z. He,* “Photon-generated Carriers Excited Superoxide Species Inducing Long-term Photoluminescence Enhancement of MAPbI3 Perovskite Single Crystals,”Journal of Materials Chemistry A, vol.5, pp. 12048-12053, 2017.

33. X. Liu*, H. Gu, K. Li, L. Guo, D. Zhu, Y. Lu, J. Wang, H.-C. Kuo, Z. Liu, W. Liu, L. Chen, J. Fang, K.-W. Ang, K. Xu, and J.-P. Ao*, “AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer,” AIP Advances,vol.7, 095305, 2017.

34. X. Liu*, H. Gu, K. Li, J. Wang, L. Wang, H.-C. Kuo, W. Liu,L. Chen, J. Fang, M. Liu, X. Lin, K. Xu, and J.-P. Ao*,"GaN schottky Barrier Diodes on Free-Standing GaN Wafer," ECS Journal of Solid State Science and Technology, Vol. 6, no, 10, N216-N220, 2017.

35. H. Gu, Y. Lu, D. Zhu, K. Li, S. Zheng, J. Wang, K.-W. Ang, K. Xu*, X. Liu*, “High temperature study on the thermal properties of few-layer Mo0.5W0.5S2 and effects of capping layers,” Results in Physics, vol. 7, 4394-4397, 2017.

36 Q. Liu, J.-H. Cai, J-Z. He, Y.-Z. Wang, D.-L. Zhang, C. Liu, W. Ren, W.-J. Yu*, X. Liu*, and Q.-T. Zhao, "80mV/dec subthreshold sswing of back-gated MoS2 FET on SiO2." Journal of Infrared and Millimeter Waves, vol. 36, np. 5, pp. 543-549, 2017.

37. L. Wang, L. Li*, T. Zhang, X. Liu*, J.-P. Ao*, “ Enhanced pH sensitivity of AlGaN/GaN ion-sensitive field effect transistors wi th Al2O3 synthesized by atomic layer deposition,” Applied Surface Science, vol. 427, pp.1199-1201, 2018.

38. V. D. Botcha, M. Zhang, K. Li, H. Gu, Z. Huang, J. Cai, Y. Lu, W. Yu, and X. Liu*, “High-K substrate effect on thermal properties of 2D InSe few layer,”Journal of Alloys and Compounds, vol. 735, pp. 594-599, 2018.

39. K. K. Tehare, S. T. Navale, F. J. Stadler, Z. He, H. Yang, X. Xiong, X. Liu,* and Rajaram S. Mane,* "Enhanced DSSCs performance of TiO2 nanostructure by surface passivation layers," Material Research Bulletin, vol. 99, pp. 491-495, 2018.

40. H. Gu, K. Wu, S. Zheng, L. Shi, M. Zhang, Z. Liu, X. Liu, J. Wang, T. Zhou*, and Ke Xu,* "Redshift of A1(longitudinal optical) mode for GaN crystals in the high electric-field," Applied Physics Express, vol.11, 001002, 2018.

41. L. Wang, L. Li, T. Xie, X. Wang, X. Liu*, and J.-P. Ao*, "Threshold voltage tuning in AlGaN/GaN HFETs with p-type Cu2O gate synthesized by megnetron reactive sputtering,"Applied Surface Science, vol. 437, pp. 98-102, 2018.

42. H. Gu, L. Chen, Y. Lu, F. Tian, Z. Zhang, J. Wang, K. Xu, J. Wu, K. Li, and X. Liu*, “Low temperature study of neutral and charged excitons in the large-area monolayer WS2,” Japanese Journal of Applied Physics，vol.57, 060309, 2018.

43. A. Sourav, Z. Li, Z. Huang, V. D. Botcha, C. Hu, J.-P. Ao, Y. Peng, H.-C. Kuo, J. Wu, X. Liu*, and K.-W. Ang*, "Large scale transparent molybdenum disulfide plasmonic photodetector using split bull eye structure," Advanced Optical Materials, 1800461,2018.

44. S. Inguva, J.-H. Cai, H. Cong, J. Wu, Y. Lu, and X. Liu*, "Controlled growth of MoS2 vertical nanosheets by tunable substrate angle via chemical vapour deposition," Materials Research Express, vol. 5, 075026, 2018.

45. K. Li, Y. Hong, Z. Li, and X. Liu*, "Thermal property engineering of InSe layer by a thin Al2O3 stress layer," Applied Physics Letters, vol. 113, 021903, 2018.

46. X. Liu, H.-C. Chiu*, H.-Y. Wang, C. Hu, H.-C. Wang, H.-L. Kao, and F.-T. Chien, "2.4 kV vertical GaN PN diodes on free standingGaN wafer using CMOS-compatible contact materials," IEEE Journal of the Electron Devices Society, vol.6, pp.825-829, 2018.

47. B. Ren, M. Sumiya, M. Liao, Y. Koide, X. Liu*, Y. Shen, and L. Sang*, “Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatments,” Journal of Alloys and Compounds, vol. 767, pp.600-605, 2018.

48. Kuilong Li, Zhiwen Li, Yuehua Hong , Cong Hu , Wei Mao, and Xinke Liu*, “Investigation of CHF3 treatment on the energy band at the MoS2/HfZrO4 heterostructure,” Applied Physics Letters, vol. 113, 143506, 2018.

49. X. Liu*, C. Hu, K. Li*, W. Wang, Z. Li, J. Ao, J. Wu, W. He, W. Mao, Q. Liu, W. Yu, R.-J. Chung,"Investigation of the energy band at the molybdenum disulfide and ZrO2 heterojunctions," Nanoscale Research Letters, vol. 13, 405, 2018.

50. X. Liu, J. Wang, C. Xu, J. Luo, D. Liang, Y. Cen, Y. Lu, Z. Li, “Temperature-dependent phonon shifts in mono-layer, few-layer, and bulk WS2 Films,” Acta Phys. -Chim. Sin. 2019.

51. V. Divakar Botcha, Yuehua Hong, Zhonghui Huang, Zhiwen Li, Qiang Liu, Jing Wu, Youming Lu, and Xinke Liu*, "Growth and Thermal Properties of Various In2Se3 Nanostructures Prepared by Single Step PVD Technique,"Journal of Alloys and Compounds, vol. 773, pp. 698-705, 2019.

52. X. Liu, Y. Hong, Z. Li, C. Xu, W. He, U. Younis, Q. Liu, J. Wu, Y. Lu, V. D. Botcha*, “Enhanced thermal conductivity of MoS2/InSe-nanoparticles/MoS2 hybrid sandwich structure,” Journal of Alloys and Compounds, vol. 777, pp. 1145-1151, 2019.

53. H. Gu, C. Hu, J. Wang, Y. Lu, J.-P. Ao, F. Tian, Y. Zhang, M. Wang, X. Liu*, and K. Xu*, “Vertical GaN Schottky barrier diodes on Ge-doped Free-Standing GaN substrates,” Journal of Alloys and Compounds, vol. 780, pp.476-481, 2019.

54. B. Ren, M. Liao, M. Sumiya, X. Liu*, Y. Koide, L. Sang*, “High-quality SiNx/p-GaN metal-insulator-semiconductor interface with low-density trap states,” Journal of Physics D: Applied Physics, vol. 52, 085105, 2019.

55. X. Liu, Z. Li, L.Min, Y. Peng, X. Xiong, Y. Lu. J.-P. Ao, J. Fang, W. He, K. Li, J. Wu, W. Mao, U. Younis*, and V. D. Botcha*, “Effect of stress layer on thermal properties of SnSe2 few layers,” Journal of Alloys and Compounds, vol.783, pp.226-231, 2019.

56. H. Gu, F. Tian, C. Zhang, K. Xu, J. Wang, Y. Chen, X. Deng, and X. Liu*, “Recovery performance of Ge-doped vertical GaN schottky barrier diodes,” Nanoscale Research Letters, vol. 14, 40, 2019.

57. X. Liu, Y. Chen, D. Li, S.-W. Wang, C.-C. Ting, L. Chen, K.-W. Ang, C.-W. Qiu, Y.-L. Chueh, X. Sun*, and H.-C. Kuo*, “Nearly lattice-matched molybdenum disulfide/gallium nitride heterostructure enabling high-performance phototransistors,” Photonics Research, vol. 7, no.3, pp.311-317, 2019.

58. H. Gu, K. Chen, X. Gao, K. Xu, Y. Lu, and X. Liu*, “Temperature- and position-dependent Raman study on carrier concentration of large-area monolayer WS2,” Applied Surface Science, vol. 481, p.241-245, 2019.

59. X. Liu, K. Li*, X. Sun, Z. Shi, Z. Huang, Z. Li, L. Min, V. Botcha, X. Chen, X. Xu, and D. Li*, “Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment,” Journal of Alloys and Compounds, vol.793, pp.599-603, 2019.

60. L. Wang, W. Liao, S. L. Wong, Z. G. Yu, S. Li, Y.-F. Lim, X. Feng, W. C. Tan, X. Huang, L. Chen, L. Liu, J. Chen, X. Gong, C. Zhu, X. Liu, Y.-W. Zhang,* D. Chi,* and K.-W. Ang*, "Artificial Synapses Based on Multiterminal memtransistors for neuromorphic application, Advanced Functional Materials, 1901106, 2019.

61. L. Wang, L. Chen, S. L. Wong, X. Huang, W. Liao, C. Zhu, Y.-F. Lim, D. Li, X. Liu*, D. Chi*, and K.-W. Ang*, "Electronic devices and circuits based on wafer-scale polycrystalline monolayer MoS2 by chemical vapor deposition," Advanced Electronic Materials 5, 1900393 (2019).

62.X. Liu*, S. P. C. Hsu, W.-C. Liu, Y.-M. Wang, X. Liu, C.-S. Lo, Y.-C. Lin, S. C. Nabilla, Z. Li, Y. Hong, C. Lin, Y. Li, G. Zhao, and R.-J. Chung*, “Salivary electrochemical cortisol biosensor based on tin disulfide nanoflakes,” Nanoscale Research Letters, vol. 14, 189, 2019.

63.L. Wang, L. Chen, S. L. Wong, X. Huang, W. Liao, C. Zhu, Y.-F. Lim, D. Li, X. Liu,* Dongzhi Chi,* and Kah-Wee Ang*, “Electronic devices and circuits based on wafer-scale polycrystalline monolayer MoS2 by chemical vapor deposition,” Advanced Electronic Materials, 1900393, 2019.

64.Z. Li, J. Wu, C. Wang, H. Zhang, W. Yu, Y. Lu and X. Liu^*, “High-performance monolayer MoS₂ photodetector enabled by oxide stress liner using scalable chemical vapor growth method,” Nanophotonics, 2020 (https://doi.org/10.1515/nanoph-2019-0515)

65. X. Jiang, M. Zhang, L. Liu, X. Shi, Y. Yang, K. Zhang, H. Zhu*, L. Chen*, X. Liu*, Q. Sun, and D. W. Zhang, “Multifunctional black phosphorus/MoS₂ van der Waals heterojunction,” Nanophotonics, 2020 (https://doi.org/10.1515/nanoph-2019-0549)

66. M. Zhang, Z. Fana, X. Jiang, H. Zhu*, L. Chen*, Y. Xia*, J. Yin, X. Liu, Q. Sun and D. W. Zhang, “MoS₂-based Charge-trapping synaptic device with electrical and optical modulated conductance,” Nanophotonics, 2020 (https://doi.org/10.1515/nanoph-2019-0548)

67. J. Wu*, Y. Zhao, M. Sun, M. Zheng, G. Zhang, X. Liu* and D. Chi*, “Enhanced photoresponse of highly air-stable palladium diselenide by thickness engineering,” Nanophotonics, 2020 (https://doi.org/10.1515/nanoph-2019-0542)

68. Y. Xiao^#, L. Min^#, X. Liu^#, W. Liu*, U. Younis, T. Peng, X. Kang, X. Wu, S. Ding, and D. W. Zhang, “Facile integration of MoS₂/SiC photodetector by direct chemical vapor deposition,” Nanophotonics, 2020 (https://doi.org/10.1515/nanoph-2019-0562)

69.X. Feng, X. Liu*, and K.-W. Ang*, “2D Photonic Memristor: Progress and Prospects,” Nanophotonics, 2020 (https://doi.org/10.1515/nanoph-2019-0543)

70. (invited)G. Cao, S. Dong, L.-M. Zhou, Q. Zhang, Y. Deng, C. Wang, H. Zhang, Y. Chen, C.-W. Qiu,* and X. Liu*, “Fano Resonance in “Photonic Molecules,” Advanced Optical Materials, 2020, 1902153.

71. B. Ren, M. Liao, M. Sumiya, J. Li, L. Wang, X. Liu,* Y. Koide, and L. Sang*, “Layered Boron nitride enabling high-performance AlGaN/GaN high electron mobility transistor,” Journal of Alloys and Compounds, vol. 829, 154542, 2020. 72. X. Liu, H.-C. Chiu, C.-H. Liu, H.-L. Kao, C.-W. Chiu, H.-C. Wang, J. Ben, W. He, and C.-R. Haung, “Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region,” IEEE Journal of the Electron Devices Society, vol. 8, 229-234, 2020.

73.X. Liu, R. Sakthivel, C.-Y. Cheng, J. Luo, L. Song, J. Wu, W. He, U. Younis, and R.-J. Chung, “3A-Amino-3A-D eoxy-(2AS, 3AS)-β-Cyclodextrin Hydrate/Tin Disulfide Modified Screen-Printed Carbon Electrode for the Electrochemical Detection of Polychlorinated Biphenyls,” Nanoscale Research Letter, vol. 15, no. 4, 2020.

74. X. Liu, X. Deng, X. Li, H.-C. Chiu, Y. Chen, V. D. Botcha, M. Wang, and W. Yu, C.-H. Lin, “Impact of Al₂O₃ stress liner on two-dimensional SnS₂ nanosheet for photodetector application,” Journal of Alloys and Compounds, vol. 830, 154716, 2020.

75. X. Liu, R. Sakthivel, W.-C. Liu, C.-W. Huang, J. Li, C. Xu, Y. Wu, L. Song, W. He^⁎, R.-J. Chung,^⁎ “Ultra-highly sensitive organophosphorus biosensor based on chitosan/tin disulfide and British housefly acetylcholinesterase,” Food Chemistry, vol. 324, 126889, 2020.

76. Z. Wang, J. Guo, Y. Zhang, J. Liu, J. S. Ponraj, S. C. Dhanabalan, T. Zhai, X. Liu*, Y. Song*, and Han Zhang*，“2D GeP-based photonic device for near-infrared and mid-infrared ultrafast photonics,” Nanophotonics, 2020 ((https://doi.org/10.1515/nanoph-2020-0248))

77. C.-H. Huang, S. H. Chang, B.-Y. Liaw, C.-Y. Liu, C.-Y. Chou, J.-R. Zhou, C.-C. LIN, H.-C. Kuo, L.-J. Song, F. Li, and X. Liu*, “Research on a novel GaN-based converted Mini-LED backlight module via a spectrum-decouple system,” IEEE Access, vol. 8, 138823, 2020.

78. H.-C. Wang, Y. Hong, Z. Chen, C. Lao, Y. Lu, Z. Yang, Y. Zhu, and X. Liu*, “ZnO UV photodetectors modified by Ag nanoparticles using all-inkjet-printing,” Nanoscale Research Letter, vol. 15, 176, 2020.

79. T. Pu, Y. Chen, X. Li, T. Peng, X. Wang, J. Li, W. He, J. Ben, Y. Lu, X. Liu*, and J.-P. Ao, “Gate structure dependent normally-off AlGaN/GaN heterostructure field-effect transistors with p-GaN cap layer,” Journal of Physics D: Applied Physics, vol. 53, 415104, 2020.

80. X. Liu, J.-H. He*, R. Sakthivel*, and R.-J. Chung*, “Rare earth erbium molybdate nanoflakes decorated functionalized carbon nanofibers: An affordable and potential catalytic platform for the electrooxidation of phenothiazine,” Electrochimica Acta, vol. 358, 136885, 2020.

81. Z. Gu, T. Zhang, J. Luo, Y. Wang, H. Liu, L. Chen, X. Liu*, W. Yu, H. Zhu, Q.-Q. Sun, and David W. Zhang, “MoS₂‑on-AlN Enables High-Performance MoS₂ Field-Effect Transistors through Strain Engineering,” ACS Applied Materials and Interface, 12, 54972-54979, 2020.

82. A. KhanTareen, K. Khan, M. Aslam, X. Liu*, and H. Zhang, “Confinement in two-dimensional materials: Major advances and challenges in the emerging renewable energy conversion and other applications,” Progress in Solid State Chemistry, 100294, 2020.

83. A. K. Tareen, K. Khan, M. Aslam, H. Zhang*, and X. Liu*, “Recent progress, challenges, and prospects in emerging group-VIA Xenes: synthesis, properties and novel applications,” Nanoscale, vol. 13, pp. 510-552, 2021.

84. J. Ben#, X. Liu#, C. Wang, Y. Zhang, Z. Shi, Y. Jia, S. Zhang, H. Zhang, W. Yu, D. Li, and X. Sun*, “Two-dimensional Ⅲ-Nitride Materials: Properties, Growth, and Applications,” Advanced Materials, 2021.

85. J. Li, F. Lin, Y. Chen, W. He, and X. Liu*, “A novel hybrid termination structure for vertical gallium nitride Schottky barrier diode by using technology computer aided design simulation,” Electronic Letter, vol. 57, no.2, pp. 83-85, 2021.

85. X. Liu, C.-L. Tseng, L.-Y. Lin, C.-A. Leed, J. Li, L. Feng, L. Song, X. Lia,* J.-H. He*, R. Sakthiveld, and R.-J. Chung,* “Template-free synthesis of mesoporous Ce3NbO7/CeO2 hollow nanospheres for label-free electrochemical immunosensing of leptin,” Sensors and Actuators: B. Chemical, vol. 341, 130005, 2021.

86. X. Liu, S. Hu, J. Luo, X. Li*, J. Wu, D. Chi, K.-W. Ang, W. Yu, and Y. Cai*，“Suspended MoS2 Photodetector Using Patterned Sapphire Substrate,” Small, 2100246，2021.

87. X. Liu, S. Hu, Z. Lin, X. Li, L. Song, W. Yu, Q. Wang, and W. He*, “High-Performance MoS₂ Photodetectors Prepared using a Patterned Gallium Nitride Substrate,” ACS Applied Materials and Interfaces, vol.13, pp. 15820-15826, 2021.

88. S. Hu, Z. Liao, J. He, W. Yu, L. Song, Q. Wang, X. Li, and X. Liu*, “Silicon nitride stress liner impacts on MoS₂ photodetectors,” Journal of Applied Physics, vol. 129, 183106, 2021.

89. X. Liu, J. Luo, D. Zhu, Y. Lu, X. Li*, J. He, H.-C. Chiu, K. Xu, W. Yu, and R.-J. Chung*, “Monolithic Integration of Strained UV-Visible Dual Color Photodetectors on 4” Multilayer MoS2-on-Free Standing GaN wafer by Direct Van Der Waals Growth,” ACS Applied Electronic Materials, 2021.

90. T. Pu, U. Younis, H.‑C. Chiu, K. Xu, H.‑C. Kuo, and X. Liu*, “Review of Recent Progress on Vertical GaN‑Based PN Diodes,” Nanoscale Research Letters, 16, 101, 2021

91. A. K. Tareen, K. Khan, W. Ahmad, M. F. Khan, Q. U. Khan, and X. Liu*，“Anovel MnO–CrN nanocomposite based non-enzymatic hydrogen peroxidese，”RSC Advances, 11, 19316, 2021.

92.G. Cao， H.-X. Xu, L.-M. Zhou, Y. Deng, Y. Zeng, S. Dong, Q. Zhang, Y. Li, H. Yang, Q. Song, X. Liu*, Ying Li, C.-W. Qiu, “Infrared metasurface-enabled compact polarization nanodevices,” Materials Today, 2021. (JCR 大类一区，IF:31.041, DOI: https://doi.org/10.1016/j.mattod.2021.06.014

93. X. Li, L.-Y. Lin, K.-Y. Wang, J. Li, L. Feng, L. Song, X. Liu*, J.-H. He*, R. Sakthivel*, and R.-J. Chung*, “Streptavidin-functionalized-polyethyleneimine/chitosan/HfO₂-Pr₆O₁₁ nanocomposite using label-free electrochemical immunosensor for detecting the hunger hormone ghrelin,” Composites Part B, vol. 224, 109231, 2021.

94. X. Liu, L.-Y. Lin, F.-Y. Tseng, Y.-C. Tan, J. Li, L. Feng, L. Song, C.-F. Lai, X. Li,* J.-H. He,* R. Sakthivel* and R.-J. Chung*, “Label-free electrochemical immunosensor based on gold nanoparticle/polyethyleneimine/reduced graphene oxide nanocomposites for the ultrasensitive detection of cancer biomarker matrix metalloproteinase-1,” Analyst, vol. 146, pp.4066-4079, 2021.

95. T. Pu, X. Li, J. Wu, J. Yang, Y. Lu, X. Liu*, and J. Ao, “Recessed anode AlGaN/GaN Schottky diode for temperature sensor application,” IEEE Transaction on Electron Devices, vol. 68, no. 10, pp. 5162-5166, 2021.

96. X. Liu, J. Luo, Y. Lin, Z. Lin, X. Liu, J. He, W. Yu, Q. Liu, T. Wei, J. Yang, W. Zhang, and J. Guo*“High-performance photodetectors using a 2D MoS₂/3D-AlN structure，”ACS Applied Electronic Materials, vol. 3, pp. 5415-5422, 2021.

97. R. Sakthivel, L.-Y. Lin, T.-H. Lee, X. Liu*, J.-H. He*, and R.-J. Chung*, “Disposable and cost-effective label-free electrochemical immunosensor for prolactin based on bismuth sulfide nanorods with polypyrrole,” Bioelectrochemistry, vol. 143, 107948, 2022.

98. C.-H. Huang, Y-T. Cheng, Y.-C. Tao, X. Liu*, and H.-C. Kuo, “Micro-LED backlight module by deep reinforcement learning and micro-macro-hybrid environment control agent,” Photonics Research, vol. 10, no. 2, pp. 269-279, 2022.

99. X. Li, F. Lin, J. Wu, Z. Zhang, L. Song, T. Pu, X. Li, X. Lin, Y. Lu, and X. Liu, “Enhanced Performance of GaN Schottky Barrier Diodes by Oxygen Plasma Treatment,” IEEE Transactions on Electron Devices, vol. 69, no. 4, pp. 1792-1797, 2022.

100. X. Liu, F. Lin, J. Li, Y. Lin, J. Wu, H. Wang, X. Li, S. Huang, Q. Wang, and H.-C. Chiu, “1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination,” IEEE Transactions on Electron Devices, vol. 69, no. 4, pp. 1938-1944, 2022.

101. X. Liu, J. Yang, J. Li, F. Lin, B. Li, Z. Zhang, W. He, and M. Huang, “GaN-Based GAA Vertical CMOS Inverter,” IEEE Journal of the Electron Devices Society, vol. 10, pp. 224-228, 2022.

102. M. Keerthi, A. K. Panda, Y.-H. Wang, X. Liu^⁎, J.-H. He^⁎, and R.-J. Chung, “Titanium nanoparticle anchored functionalized MWCNTs for electrochemical detection of ractopamine in porcine samples with ultrahigh sensitivity,” Food Chemistry, vol. 378, 132083, 2022.

103. J. Ben, Y. Jia, T. Wu, X. Liu*, and X. Li, “Sodium birnessite@graphene hierarchical structures for ultrafast sodium ion storage,” Journal of Electroanlytical Chemistry, vol. 906, 116007, 2022.

104. J. Ben, J. Luo, Z. Lin, X. Sun*, X. Liu,* and X. Li, “Introducing voids around the interlayer of AlN by high temperature,” Chinese Physics B, vol. 31, 76104, 2022.

105. H.-C. Wang, Y. Lin, X. Liu, X. Deng, J. Ben, W. Yu, D. Zhu, and X. Liu*，Self-driven Photodetector based on SnS2/WS2 van der Waals Heterojunction with Al₂O₃ Capping Layer, Chinese Physics B, 2022.

会议文章

1. X. Liu, C. K. Chia, M. Suryana, and Y. W. Zhang, “Ultra-wide band high reflectivity SiO2/SiNx distributed bragg reflector for broad band photonic devices,” 3rd MRS-Singapore Conference on Advanced Material, Singapore, Feb. 25-27, 2008.

2. H.-C. Chin, M. Zhu, Z.-C. Lee, X. Liu, K.-M. Tan, H. K. Lee, L. Shi, L.-J. Tang, C.-H. Tung, L.-S. Tan, and Y.-C. Yeo, “A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel GaAs n-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stack,” IEEE International Electron Device Meeting 2008, San Francisco CA, Dec. 15-17, 2008, pp. 383-386.

3. H.-C. Chin, Z. Lin, X. Liu, L.-S. Tan, and Y.-C. Yeo, “Inversion-type surface channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts,” International Symposium on VLSI Technology, Systems and Applications, Hsinchu, Taiwan, Apr. 27-29, 2009, pp. 143-144.

4. H.-C. Chin, X. Gong, X. Liu, Z. Lin, and Y.-C. Yeo, “Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering,” Symp. on VLSI Tech. 2009, Kyoto, Japan, Jun. 15-18, 2009, pp. 244-245.

5. X. Liu, H.-C. Chin, L. S. Tan, and Y.-C. Yeo, “Metal-gate/high-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor deposition,” International Conference on Solid State Devices and Materials, Sendai, Japan, Oct. 7-9, 2009, pp. 1214-1215.

6. X. Liu, H.-C. Chin, E. K. F. Low, W. Liu, L. S. Tan, and Y.-C. Yeo, “In situ silane surface passivation for gate-first undoped AlGaN/GaN HEMTs with minimum current collapse and high-permittivity dielectric,” International Conference on Solid State Devices and Materials, Tokyo, Japan, Sep. 22-24, 2010, pp. 141-142.

7. X. Liu, B. Liu, E. K. F. Low, H.-C. Chin, W. Liu, M. Yang, L. S. Tan, and Y.-C. Yeo, “Diamond-like carbon (DLC) liner with high compressive stress formed on AlGaN/GaN MOS-HEMTs with in situ silane surface passivation for performance enhancement,” IEEE International Electron Device Meeting 2010, San Francisco CA, Dec. 6-8, 2010, pp. 261-264. (also reported in Semiconductor TODAY , vol. 5, issue 10, December 2010)

8. X. Liu, C. Zhan, K. W. Chan, W. Liu, L. S. Tan, K. L. Teo, K. J. Chen, and Y.-C. Yeo, “AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm2 using a CMOS-compatible gold-free process,” International Symposium on VLSI Technology, Systems and Applications, Hsinchu, Taiwan, Apr. 23-25, 2012.

9. X. Liu, C. Zhan, K. W. Chan, W. Liu, D. Z. Chi, L. S. Tan, K. J. Chen, and Y.-C. Yeo, “AlGaN/GaN-on-sapphire MOS-HEMTs with breakdown voltage of 1400 V and on-state resistance of 22 mΩ.cm2 using a CMOS-compatible gold-free process,” International Conference on Solid-State Devices and Materials, Kyoto, Japan, Sep. 25-27, 2012, pp. 879-880.

10. S. S. Pannirselvam, X. Liu, Y.-C. Yeo, and L. S. Tan, “Effects of in situ surface passivation of AlGaN/GaN MOS-HEMT: A simulation study,” International Conference on Solid-State Devices and Materials, Kyoto, Japan, Sep. 25 - 27, 2012, pp. 176-177.

11. X. Liu, “High Voltage AlGaN/GaN MOS-HEMTs with a CMOS compatible Gold-free process,” Energy Materials Nanotechnology, Chendu, China, Sep. 22-25, 2014.

12. X. Liu and H. Y. Yu, “High voltage AlGaN/GaN MOS-HEMTs with CMOS-compatible gold-free process,” International Conference on Solid-State and Integrated Circuit Technology, Guilin, China, Oct. 28-31, 2014.

13. 刘新科*、何佳铸、俞文杰、吕有明、贾芳、曾玉祥、韩舜、曹培江、柳文军、朱德亮, “具有InGaN再生长源/漏的800伏高压AlGaN/GaN MOS-HEMTs,” 第七届全国ZnO学术会议，8月16-18日，2015。

14. Jiazhu He, Xinke Liu*, Youming Lu, Wenjie Yu, Jing Wu, and Leng Seow Tan, “AlGaN/GaN MOS-HEMTs with polarized P(VDF-TrFE) Ferroelectric Polymer Gating,” 第一届全国宽禁带半导体学术及应用技术会议，pp.135-136, 苏州，10月30日-11月2日，2015.

15. [Invited Paper] K.-W. Ang, and X. Liu, “2D layered semiconductor for next generation nanoelectronics applications,” 2015 Energy Materials Nanotechnology (EMN) Fall Meeting, Las Vegas, USA, Nov. 16-19, 2015.

16. [Invited Paper] K.-W. Ang, and X. Liu, “Two-dimensional materials and devices for ubiquitous electronic applications,” 2nd Annual World Congress of Smart Materials - 2016 (WCSM 2016), Singapore, Mar. 4-6, 2016.

17. X. Liu, J.-P. Ao, J. He, J. Wang, W. Yu, and K. Xu, “1200 V GaN schottky barrier diode on 2” free-standing wafer using a CMOS-Compatible gold-free process,” 10th International Conference on New Diamond and Nano Carbons, Xi’an China, May 22-26, 2016.

18. Z.-P. Ling, X. Feng, H. Jiang, Z. He, X. Liu,* and K.-W. Ang*, “Black phosphorus transistors with enhanced hole transport and subthreshold swing using ultra-thin HfO2 high-k gate dielectric,” IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, Hawaii, USA, Jun. 12-13, 2016.

19. 陈乐, 刘新科*，李奎龙，***，何佳铸，王建峰，俞文杰，徐科, “高性能自支撑GaN肖特基二极管,” 第十四届全国 MOCVD 学术会议, 吉林延边, 8月16-19日，2016。

20. 何佳铸，陈乐，李奎龙，刘新科*，吕有明*，“二维材料MoS2的制备及其器件的研究，” 第十四届全国 MOCVD 学术会议, 吉林延边, 8月16-19日，2016。

21. 李奎龙，何佳铸，陈乐，刘新科*，董建荣*，吕有明，“晶格异变Ga1-xInxP(x=0.48～0.78)过渡层的生长与应力弛豫研究，” 第十四届全国 MOCVD 学术会议, 吉林延边, 8月16-19日，2016。

22. P. Xia, S. Wang, D. Chi, C. Li, Z. He, X. Liu*, and K.-W. Ang*, “The physical origin of interface states and its influence on MOSCAP with magnetron sputtered MoS2 and HfO2 high-k gate dielectric,” 2016 International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, Sep. 26-29, 2016.

23. C. Li, Z. Huang, J. Wang, K. Xu, J.-P. Ao, and X. Liu*, “Vertical GaN Schottky barrier diodes with record high current Ion/Ioff Ratio (~2.3×1010)on free-standing GaN wafer,” Materials Research Society (MRS) Spring Meeting, Arizona, USA, Apr. 17-21, 2017.

24. X. Feng, V. V. Kulish, P. Wu, X. Liu, and K.-W. Ang, “Adatoms Doping Effects on the Thermal Stability of Black Phosphorus formed on High-k Gate Dielectric,” Materials Research Society (MRS) Spring Meeting, Arizona, USA, Apr. 17-21, 2017

25. [Invited Paper] X. Liu*, H. Gu, K. Li, L. Guo, J. Wang, K. Xu, and J.-P. Ao, “GaN-based Power Devices (SBDs, HEMTs) on Free-standing Wafer,” International Symposium on Single Crystal Diamond and Electronics, Xi’an, June 10-14, 2017.

26. [Invited Paper] J.-P. Ao*, L. Wang, Y. Bu, and X. Liu*, “Development of AlGaN/GaN ion-sensitive field-effect transistor,” International Symposium on Single Crystal Diamond and Electronics, Xi’an, June 10-14, 2017.

27. [Invited Paper] X. Liu, “ALD-high k HfO2 Enabling BP-FETs with Near Ideal SS and High Hole Mobility at Room Temperature,” Workshop on Atomic Layer Deposition, Hsinchu, Taiwan, June 23, 2017.

28. V. D. Botcha, Y. Lu, and X. Liu*, “Fabrication of GO monolayer/sputtered ZnO hybrid layered structures by Modified Langmuir Blodgett Process,” The 8th Asia-Pacific Workshop on Widegap Semiconductors (APWS2017), Qingdao, China, Sep. 24-27, 2017.

29. X. Liu*, Z. Huang, D. Zhu, W. Liu, P. Cao, S. Han, W. Xu, and Y. Lu, “Demonstration of Monolayer WxMo1-xS2-based Field Effect Transistors by Chemical Vapor Deposition,” The 8th Asia-Pacific Workshop on Widegap Semiconductors (APWS2017), Qingdao, China, Sep. 24-27, 2017.

30. X. Liu*, H. Gu, K. Li, L. Guo, J. Wang, H.-C. Kuo, K. Xu, and J.-P. Ao, “AlGaN/GaN High Electron Mobility Transistors on Free-standing Wafer,” The 8th Asia-Pacific Workshop on Widegap Semiconductors (APWS2017), Qingdao, China, Sep. 24-27, 2017.

31. H. Gu, J. He, K. Xu, and X. Liu*, “Raman study of few-layer Mo1−xWxS2,” The 8th Asia-Pacific Workshop on Widegap Semiconductors (APWS2017), Qingdao, China, Sep. 24-27, 2017.

32. H. Gu, J. He, K. Xu, and X. Liu*, “Low-temperature optical properties study of monolayer MoS2,” The 8th Asia-Pacific Workshop on Widegap Semiconductors (APWS2017), Qingdao, China, Sep. 24-27, 2017.

33. X. Liu*, H. Gu, K. Li, J. He, K. Lai, D. Zhu, Y. Lu, W. He, J. Fang, J. Wang, H.-C. Kuo, Z. Liu, W. Liu, K.-W. Ang, Y. Hao, K. Xu, and J.-P. Ao*,"Unpassivated AlGaN/GaN HEMTs with Ideal Sub-threshold Swing (~60mV/decade) on Extremely High Quality Free-standing GaN Substrate," International Conference on Solid State Devices and Materials, Sendai, Japan, Sep. 19-22, 2017.

34. (invited) X. Liu, “GaN-based devices (diodes and HEMTs) on free standing wafer,” The 2nd Workshop on Nitride Materials and Their Applications (MNMA2017), Suzhou, China, Oct. 25-26, 2017.

35. X. Liu, K. Xu, and J.-P. Ao, "High Voltage GaN-based Power Devices on Free-standing Wafer", Progress in electromagnetics research symposium, Singapore, Nov. 19-22, 2017.

36. (invited) X. Liu, "GaN-based power device and power module," 4th International Conference on ALD Applications & 2018 China ALD conference, Oct. 14-17, 2018.

37. Zhiwen Li, Kuilong Li, Yuehua Hong, Jiale Wang, Cong Hu, and Xinke Liu*, "Investigation of The Band Alignment At The Multilayer MoS2/HfO2 and MoS2/HfZrO4 Heterojunction,"4th International Conference on ALD Applications & 2018 China ALD conference, Oct. 14-17, 2018.

38. Xinke Liu, Hsien-Chin Chiu*, Hsiang-Chun Wang, Cong Hu, "6-inch and 8-inch GaN on Si RF HEMT technology for 5G communication application," SSLCHINA and IFWS, Shenzhen, Oct. 23-25, 2018.

39. (invited) Xinke. Liu*, Jin-Ping Ao, Qing Xia, and Hsien-Chin Chiu, "3rd Generation Semiconductor GaN-based Power Devices and DC/DC Power Module," International Symposium on Low Dimensional Materials for Optoelectronics, Shenzhen, Oct. 25-28, 2018.

40. Cong Hu, V. Divakar Botcha, Kuilong Li, Hong Gu, Yuehua Hong, Zhiwen Li, and Xinke Liu*, “High-K substrate and Capping layer effects on thermal properties of 2D-TMD layers,” International Symposium on Low Dimensional Materials for Optoelectronics, Shenzhen, Oct. 25-28, 2018.

41. V. Divakar Botcha, Yuehua Hong, Zhiwen Li, Wang Jiale, Cong Hu, and Xinke Liu*, “Growth and Thermal Properties of In-Se Nanostructures And Enhanced thermal conductivity of hybrid MoS2/InSe-Nanoparticles/MoS2 andwich Structure,” International Symposium on Low Dimensional Materials for Optoelectronics, Shenzhen, Oct. 25-28, 2018.

42. C. Hu, J. Wang, S.-W. H. Chen, H.-Y. Wang, H.-C. Chiu, H.-C. Kuo, K. Xu, D. Li, X. Liu*, “GaN-on-GaN PIN Diodes with a High Baliga’s Figure-of-Merit of 29.7 GW/cm2,” 13th International Conference on Nitride Semiconductors, Seattle, Washington, July 7-12, 2019.

43. (Invited) X. Liu, "MoS2-on-GaN method for high performance visible photodetectors," International Symposium on Single Crystal Diamond and Electronics, Xi’an China, June 9-12, 2019.

44. X. Liu, "Large scale MoS2-on-GaN van der waals heterostructure for photonic device application,", shenzhen, China,Nov.25-26, 2020.

45. X. Liu, “Large Scale MoS2-on-GaN Van der Waals heterostructure for photonic device application,” 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors (SSLCHINA2019 & IFWS 2019), Shenzhen, Nov. 23-25, 2020.

46.J. Luo, Z. Lin, J. He, Q. Zhang, and X. Liu*, “UV-Visible wide-band light detection with ALD Al2O3 stress liner using 4” MoS2-on-GaN-on-GaN wafer,” 4th China Conference on ALD, Changchun, Jul. 27-30, 2021.

47.X. Liu, “1.7 kV Vertical GaN-on-GaN Schottky Barrier Diodes on 2”Free-standing Wafer,” 18th China International Forum on Solid State Lighting & 2021 International Forum on Wide Bandgap Semiconductors (SSLCHINA2021 & IFWS 2021), Shenzhen, Nov. 29-Dec.01, 2021.

48. J. Luo, Z. Zhang Q. Zhang, and X. Liu*, “High performance photodetectors based on 2D-XS₂(X=Mo、Re)/3D-GaN,” 18th China International Forum on Solid State Lighting & 2021 International Forum on Wide Bandgap Semiconductors (SSLCHINA2021 & IFWS 2021), Shenzhen, Nov. 29-Dec.01, 2021.

专利

1．刘新科,何佳铸,刘强,俞文杰,吕有明,陈凌霄,杨育佳，一种氮化镓异质结场效应晶体管ZL201520678062.8 (已经转让)

2．刘新科，刘强,何佳铸,俞文杰,韩舜,曹培江,柳文军,曾玉祥，贾芳，朱德亮,吕有明，具有应力结构的二硫化钼薄膜场效应晶体管 ZL201520729820.4(已经转让)

3．刘新科，何佳铸，刘强, 俞文杰, 吕有明，韩舜，曹培江，柳文军，曾玉祥，贾芳，朱德亮，一种新型鳍式场效应晶体管， ZL201520915736.1(已经转让)

4．刘新科, 何佳铸, 吕有明, 韩舜, 曹培江, 柳文军, 曾玉祥, 贾芳, 朱德亮, 一种二硫化钼薄膜的制备方法及二硫化钼薄膜, PCT/CN2015/099600

5．刘新科、何佳铸、刘强、吕有明、俞文杰、韩舜、曹培江、柳文军、曾玉祥、贾芳、朱德亮, 一种硫化钨薄膜及其制备方法, PCT/CN2016/077550

6．刘新科，李奎龙，何佳铸，陈乐，何祝兵，俞文杰，吕有明，韩舜，曹培江，柳文军，曾玉祥，贾芳，朱德亮，洪家伟，一种 GaN-MoS₂分波段探测器及其制测方法, ZL201610489139.6(已经转让)

7. 刘新科，李奎龙，何佳铸，吕有明，韩舜，曹培江，柳文军，曾玉祥，贾芳，朱德亮，一种二硫化钼薄膜的制备方法及二硫化钼薄膜, ZL201510292963.8.(已经转让)

8. 刘新科,王磊,***,异质结场效应晶体管及其制备方法,PCT/CN2018/091797(已经转让)

9. 刘新科,刘睿,李奎龙,何佳铸,陈乐,何祝兵,俞文杰,吕有明,洪家伟, 一种石墨烯/四氧化三铁复合吸波材料及其制备方法,201611064618.X(已经转让)

10.刘新科，刘强，俞文杰，基于铁电栅介质的负电容二硫化钼晶体管及其制备方法，ZL201710743092.6(已经转让)

11.刘新科，胡聪，王佳乐，一种半导体和二维材料的组合功率器件及其制备方法，ZL201810750083.4.(已经转让)

11.XINKE LIU et al Method for preparing tungsten sulfide thin film, US10421668B2(已经转让)

12.刘新科，胡聪，王佳乐，一种半导体和二维材料的组合功率器件及其制备方法，ZL201810750082.X(已经转让)

13.刘新科,罗江流,贲建伟,贺威,一种蓝光/红光双色LED芯片封装结构及制备方法,ZL202010075461.0(已经转让)

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